FQP2N30
onsemi美国

FQP2N30

停产单 FET,MOSFETTO-220-3

MOSFET N-CH 300V 2.1A TO220-3

沟道N 沟道
耐压300 V
连续漏极电流2.1 A
导通电阻3.7 Ω

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技术参数

沟道N 沟道
耐压300 V
连续漏极电流2.1 A
导通电阻3.7 Ω最大 · 1.05A
阈值电压5 V最大 · 250μA
电源
Current - Continuous Drain (Id) @ 25°C2.1A (Tc)
Drain to Source Voltage (Vdss)300 V
Drive Voltage (Max Rds On, Min Rds On)10V
Power Dissipation (Max)40W (Tc)
环境与封装
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
PackageTube
Package / CaseTO-220-3
Supplier Device PackageTO-220-3
其他
Base Product NumberFQP2
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds130 pF @ 25 V
Mfronsemi
Product StatusObsolete
Rds On (Max) @ Id, Vgs3.7Ohm @ 1.05A, 10V
SeriesQFET®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id5V @ 250µA

器件图片

技术资料