FQP4N90C
onsemi美国

FQP4N90C

停产单 FET,MOSFETTO-220-3

MOSFET N-CH 900V 4A TO220-3

沟道N 沟道
耐压900 V
连续漏极电流4 A
导通电阻4.2 Ω

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技术参数

沟道N 沟道
耐压900 V
连续漏极电流4 A
导通电阻4.2 Ω最大 · 2A
阈值电压5 V最大 · 250μA
电源
Current - Continuous Drain (Id) @ 25°C4A (Tc)
Drain to Source Voltage (Vdss)900 V
Drive Voltage (Max Rds On, Min Rds On)10V
Power Dissipation (Max)140W (Tc)
环境与封装
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
PackageTube
Package / CaseTO-220-3
Supplier Device PackageTO-220-3
其他
Base Product NumberFQP4
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds960 pF @ 25 V
Mfronsemi
Product StatusObsolete
Rds On (Max) @ Id, Vgs4.2Ohm @ 2A, 10V
SeriesQFET®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id5V @ 250µA

器件图片

技术资料