FQP6N60C
onsemi美国

FQP6N60C

停产单 FET,MOSFETTO-220-3

MOSFET N-CH 600V 5.5A TO220-3

沟道N 沟道
耐压600 V
连续漏极电流5.5 A
导通电阻2 Ω

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技术参数

沟道N 沟道
耐压600 V
连续漏极电流5.5 A
导通电阻2 Ω最大 · 2.75A
阈值电压4 V最大 · 250μA
电源
Current - Continuous Drain (Id) @ 25°C5.5A (Tc)
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10V
Power Dissipation (Max)125W (Tc)
环境与封装
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
PackageTube
Package / CaseTO-220-3
Supplier Device PackageTO-220-3
其他
Base Product NumberFQP6
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds810 pF @ 25 V
Mfronsemi
Product StatusObsolete
Rds On (Max) @ Id, Vgs2Ohm @ 2.75A, 10V
SeriesQFET®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id4V @ 250µA

器件图片

技术资料