FQP7P06
onsemi美国

FQP7P06

停产单 FET,MOSFETTO-220-3

MOSFET P-CH 60V 7A TO220-3

沟道P 沟道
耐压60 V
连续漏极电流7 A
导通电阻410 mΩ

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技术参数

沟道P 沟道
耐压60 V
连续漏极电流7 A
导通电阻410 mΩ最大 · 3.5A
阈值电压4 V最大 · 250μA
电源
Current - Continuous Drain (Id) @ 25°C7A (Tc)
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)10V
Power Dissipation (Max)45W (Tc)
环境与封装
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
PackageTube
Package / CaseTO-220-3
Supplier Device PackageTO-220-3
其他
Base Product NumberFQP7
FET Feature-
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds295 pF @ 25 V
Mfronsemi
Product StatusObsolete
Rds On (Max) @ Id, Vgs410mOhm @ 3.5A, 10V
SeriesQFET®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±25V
Vgs(th) (Max) @ Id4V @ 250µA

器件图片

技术资料