MOSFET N-CH 900V 1.4A TO220F
沟道N 沟道
耐压900 V
连续漏极电流1.4 A
导通电阻7.2 Ω
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沟道N 沟道
耐压900 V
连续漏极电流1.4 A
导通电阻7.2 Ω最大 · 700mA
阈值电压5 V最大 · 250μA
| 电源 | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 1.4A (Tc) |
| Drain to Source Voltage (Vdss) | 900 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Power Dissipation (Max) | 35W (Tc) |
| 环境与封装 | |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package | Tube |
| Package / Case | TO-220-3 Full Pack |
| Supplier Device Package | TO-220F-3 |
| 其他 | |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 500 pF @ 25 V |
| Mfr | Fairchild Semiconductor |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 7.2Ohm @ 700mA, 10V |
| Series | QFET® |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±30V |
| Vgs(th) (Max) @ Id | 5V @ 250µA |