onsemiUnited States

FQU3P50TU

ObsoleteSingle FETs, MOSFETsTO-251-3 Short Leads

MOSFET P-CH 500V 2.1A IPAK

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Technical parameters

Key specs

ChannelP-channel
Drain-source voltage500 V
Continuous drain current2.1 A
On-resistance4.9 ΩMax · 1.05A
Gate threshold voltage5 VMax · 250μA
Power
Current - Continuous Drain (Id) @ 25°C2.1A (Tc)
Drain to Source Voltage (Vdss)500 V
Drive Voltage (Max Rds On, Min Rds On)10V
Power Dissipation (Max)2.5W (Ta), 50W (Tc)
Environment and package
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
PackageTube
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA
Supplier Device PackageI-PAK
Other
Base Product NumberFQU3
FET Feature-
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds660 pF @ 25 V
Mfronsemi
Product StatusObsolete
Rds On (Max) @ Id, Vgs4.9Ohm @ 1.05A, 10V
SeriesQFET®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id5V @ 250µA

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