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Technical parameters

Key specs

TypeNPN
Collector-emitter voltage400 V
Collector current500 mAMax
DC current gain40200mA
Power2 WMax
Power
Current - Collector Cutoff (Max)100nA (ICBO)
Current - Collector (Ic) (Max)500 mA
Power - Max2 W
Voltage - Collector Emitter Breakdown (Max)400 V
AC and DC characteristics
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 200mA, 10V
Frequency - Transition50MHz
Environment and package
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR)
Package / CaseTO-261-4, TO-261AA
Supplier Device PackageSOT-223-3
Other
Base Product NumberFZT658
MfrDiodes Incorporated
Product StatusObsolete
Series-
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic500mV @ 10mA, 100mA

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