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Technical parameters

Key specs

ChannelP-channel
Continuous drain current7 A
On-resistance18 mΩMax · 7A
Gate threshold voltage2.5 VMax · 250μA
Power
Current - Continuous Drain (Id) @ 25°C7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Power Dissipation (Max)2.5W (Tc)
Environment and package
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR)
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SOP
Other
FET FeatureStandard
FET TypeP-Channel
MfrGoford Semiconductor
Product StatusActive
Rds On (Max) @ Id, Vgs18mOhm @ 7A, 10V
SeriesTrenchFET®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.5V @ 250µA

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