Goford SemiconductorTaiwan, China
P-20V,-8.2A,RD(MAX)<8.5M@-4.5V,V
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View full reportTechnical parameters
Key specs
ChannelP-channel
Drain-source voltage20 V
Continuous drain current8.2 A
On-resistance8.5 mΩMax · 4.2A
Gate threshold voltage900 mVMax · 250μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 8.2A (Tc) |
| Drain to Source Voltage (Vdss) | 20 V |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Power Dissipation (Max) | 1.05W (Tc) |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR) Cut Tape (CT) Digi-Reel® |
| Package / Case | 8-TSSOP (0.173", 4.40mm Width) |
| Supplier Device Package | 8-TSSOP |
| Other | |
| FET Feature | - |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 29 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1255 pF @ 10 V |
| Mfr | Goford Semiconductor |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 8.5mOhm @ 4.2A, 4.5V |
| Series | - |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±8V |
| Vgs(th) (Max) @ Id | 900mV @ 250µA |