Goford SemiconductorTaiwan, China
MOSFET P-CH 60V 8A DFN3*3-8L
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View full reportTechnical parameters
Key specs
ChannelP-channel
Continuous drain current8 A
On-resistance52 mΩMax · 6A
Gate threshold voltage3.5 VMax · 250μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Power Dissipation (Max) | 32W (Tc) |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Supplier Device Package | 8-DFN (3.15x3.05) |
| Other | |
| FET Feature | Standard |
| FET Type | P-Channel |
| Mfr | Goford Semiconductor |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 52mOhm @ 6A, 10V |
| Series | TrenchFET® |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 3.5V @ 250µA |