MOSFET P-CH 30V 10A DFN3*3-8L
沟道P 沟道
连续漏极电流10 A
导通电阻26 mΩ
阈值电压1.5 V
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沟道P 沟道
连续漏极电流10 A
导通电阻26 mΩ最大 · 10A
阈值电压1.5 V最大 · 250μA
| 电源 | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Power Dissipation (Max) | 20W (Tc) |
| 环境与封装 | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Supplier Device Package | 8-DFN (3.15x3.05) |
| 其他 | |
| FET Feature | Standard |
| FET Type | P-Channel |
| Mfr | Goford Semiconductor |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 26mOhm @ 10A, 4.5V |
| Series | TrenchFET® |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±12V |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |