Goford SemiconductorTaiwan, China
P30V,RD(MAX)<20M@-10V,RD(MAX)<26
All alternatives
View full reportTechnical parameters
Key specs
ChannelP-channel
Drain-source voltage30 V
Continuous drain current12 A
On-resistance20 mΩMax · 6A
Gate threshold voltage2 VMax · 250μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Power Dissipation (Max) | 30W (Tc) |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR) Cut Tape (CT) Digi-Reel® |
| Package / Case | 8-PowerVDFN |
| Supplier Device Package | 8-DFN (3.15x3.05) |
| Other | |
| FET Feature | Standard |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 24.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1253 pF @ 15 V |
| Mfr | Goford Semiconductor |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 6A, 10V |
| Series | TrenchFET® |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 2V @ 250µA |