Goford SemiconductorTaiwan, China
MOSFET 2N-CH 60V 20A 8DFN
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View full reportTechnical parameters
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Drain to Source Voltage (Vdss) | 60V |
| Power - Max | 48W (Tc) |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR) |
| Package / Case | 8-DFN (4.9x5.75) |
| Supplier Device Package | 8-PowerTDFN |
| Other | |
| Base Product Number | G20N |
| FET Feature | Standard |
| Gate Charge (Qg) (Max) @ Vgs | 25nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1326pF @ 30V |
| Mfr | Goford Semiconductor |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 20A, 10V |
| Series | TrenchFET® |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |