Goford SemiconductorTaiwan, China
P15V,RD(MAX)<8.5M@-4.5V,RD(MAX)<
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View full reportTechnical parameters
Key specs
ChannelP-channel
Drain-source voltage15 V
Continuous drain current70 A
On-resistance8.5 mΩMax · 20A
Gate threshold voltage1.5 VMax · 250μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 70A (Tc) |
| Drain to Source Voltage (Vdss) | 15 V |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Power Dissipation (Max) | 70W (Tc) |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR) Cut Tape (CT) Digi-Reel® |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package | TO-252 |
| Other | |
| FET Feature | Standard |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 55 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3500 pF @ 10 V |
| Mfr | Goford Semiconductor |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 8.5mOhm @ 20A, 4.5V |
| Series | TrenchFET® |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±12V |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |