GeneSiC SemiconductorUnited States
DIODE SIL CARB 1.2KV 8A TO252-2
All alternatives
View full reportTechnical parameters
Key specs
Reverse voltage1.2 kV
Average rectified current8 A
Forward voltage1.8 VMax · 2 A
TypeSchottky
| Power | |
|---|---|
| Current - Average Rectified (Io) | 8A |
| Current - Reverse Leakage @ Vr | 5 µA @ 1200 V |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 2 A |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Package | Tape & Reel (TR) Cut Tape (CT) Digi-Reel® |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package | TO-252-2 |
| Other | |
| Capacitance @ Vr, F | 73pF @ 1V, 1MHz |
| Mfr | GeneSiC Semiconductor |
| Product Status | Active |
| Reverse Recovery Time (trr) | 0 ns |
| Series | SiC Schottky MPS™ |
| Speed | No Recovery Time > 500mA (Io) |
| Technology | SiC (Silicon Carbide) Schottky |