GD25LE128ESIGR

在产存储器8-SOP

128MBIT, 1.8V, SOP8 208MIL, INDU

类型Flash
容量128 Mbit
接口SPI
供电电压1.65 ~ 2 V

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技术参数

类型Flash
容量128 Mbit
接口SPI
供电电压1.65 ~ 2 V
时钟频率133 MHz最大
电源
Voltage - Supply1.65V ~ 2V
交流 / 直流特性
Clock Frequency133 MHz
环境与封装
Memory Size128Mbit
Mounting TypeSurface Mount
Operating Temperature-40°C ~ 85°C (TA)
PackageTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Package / Case8-SOIC (0.209", 5.30mm Width)
Supplier Device Package8-SOP
其他
Access Time6 ns
Memory FormatFLASH
Memory InterfaceSPI - Quad I/O, QPI
Memory Organization16M x 8
Memory TypeNon-Volatile
MfrGigaDevice Semiconductor (HK) Limited
Product StatusActive
Series-
TechnologyFLASH - NOR (SLC)
Write Cycle Time - Word, Page60µs, 2.4ms

技术资料