GeneSiC SemiconductorUnited States
DIODE ARR SIC 1200V 55A TO247-3
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View full reportTechnical parameters
| Power | |
|---|---|
| Current - Average Rectified (Io) (per Diode) | 55A (DC) |
| Current - Reverse Leakage @ Vr | 20 µA @ 1200 V |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 30 A |
| Environment and package | |
| Mounting Type | Through Hole |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Package | Tube |
| Package / Case | TO-247-3 |
| Supplier Device Package | TO-247-3 |
| Other | |
| Base Product Number | GD2X |
| Diode Configuration | 1 Pair Common Cathode |
| Mfr | GeneSiC Semiconductor |
| Product Status | Active |
| Series | SiC Schottky MPS™ |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Technology | SiC (Silicon Carbide) Schottky |
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