GeneSiC SemiconductorUnited States
DIODE MOD SIC 1200V 76A SOT227
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View full reportTechnical parameters
| Power | |
|---|---|
| Current - Average Rectified (Io) (per Diode) | 76A (DC) |
| Current - Reverse Leakage @ Vr | 15 µA @ 1200 V |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 50 A |
| Environment and package | |
| Mounting Type | Chassis Mount |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Package | Tube |
| Package / Case | SOT-227-4, miniBLOC |
| Supplier Device Package | SOT-227 |
| Other | |
| Base Product Number | GD2X |
| Diode Configuration | 2 Independent |
| Mfr | GeneSiC Semiconductor |
| Product Status | Active |
| Reverse Recovery Time (trr) | 0 ns |
| Series | SiC Schottky MPS™ |
| Speed | No Recovery Time > 500mA (Io) |
| Technology | SiC (Silicon Carbide) Schottky |