GeneSiC SemiconductorUnited States
DIODE SIL CARB 1.2KV 30A TO263-7
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View full reportTechnical parameters
Key specs
Reverse voltage1.2 kV
Average rectified current30 A
TypeSchottky
| Power | |
|---|---|
| Current - Average Rectified (Io) | 30A |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction | 175°C |
| Package | Tube |
| Package / Case | - |
| Supplier Device Package | TO-263-7 |
| Other | |
| Capacitance @ Vr, F | - |
| Mfr | GeneSiC Semiconductor |
| Product Status | Active |
| Reverse Recovery Time (trr) | 0 ns |
| Series | SiC Schottky MPS™ |
| Speed | No Recovery Time > 500mA (Io) |
| Technology | SiC (Silicon Carbide) Schottky |
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