GeneSiC SemiconductorUnited States
DIODE SIL CARB 1.7KV 122A TO247
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View full reportTechnical parameters
Key specs
Reverse voltage1.7 kV
Average rectified current122 A
Forward voltage1.8 VMax · 60 A
TypeSchottkyFast Recovery =< 500ns，> 200mA (Io)
| Power | |
|---|---|
| Current - Average Rectified (Io) | 122A |
| Current - Reverse Leakage @ Vr | 40 µA @ 1700 V |
| Voltage - DC Reverse (Vr) (Max) | 1700 V |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 60 A |
| Environment and package | |
| Mounting Type | Through Hole |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Package | Tube |
| Package / Case | TO-247-2 |
| Supplier Device Package | TO-247-2 |
| Other | |
| Base Product Number | GD60 |
| Capacitance @ Vr, F | 4577pF @ 1V, 1MHz |
| Mfr | GeneSiC Semiconductor |
| Product Status | Active |
| Series | SiC Schottky MPS™ |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Technology | SiC (Silicon Carbide) Schottky |