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Technical parameters

Power
Current - Average Rectified (Io) (per Diode)10A
Current - Reverse Leakage @ Vr2 µA @ 400 V
Voltage - DC Reverse (Vr) (Max)400 V
Voltage - Forward (Vf) (Max) @ If1.1 V @ 5 A
Environment and package
Mounting TypeThrough Hole
Operating Temperature - Junction-55°C ~ 150°C
PackageTube
Package / CaseTO-220-3
Supplier Device PackageTO-220AB
Other
Base Product NumberGP1004
Diode Configuration1 Pair Common Cathode
MfrTaiwan Semiconductor Corporation
Product StatusActive
Series-
SpeedStandard Recovery >500ns, > 200mA (Io)
TechnologyStandard

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