Taiwan Semiconductor CorporationTaiwan, China
DIODE GEN PURP 600V 10A TO263AB
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View full reportTechnical parameters
Key specs
Reverse voltage600 V
Average rectified current10 A
Forward voltage1.1 VMax · 10 A
TypeStandardStandard Recovery >500ns，> 200mA (Io)
| Power | |
|---|---|
| Current - Average Rectified (Io) | 10A |
| Current - Reverse Leakage @ Vr | 5 µA @ 600 V |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 1.1 V @ 10 A |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Package | Tape & Reel (TR) Cut Tape (CT) Digi-Reel® |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package | TO-263AB (D²PAK) |
| Other | |
| Base Product Number | GPAS1005 |
| Capacitance @ Vr, F | 50pF @ 4V, 1MHz |
| Mfr | Taiwan Semiconductor Corporation |
| Product Status | Active |
| Series | - |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Technology | Standard |