GaNPowerUnited States
GANFET N-CH 650V 10A DFN 5X6
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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage650 V
Continuous drain current10 A
Gate threshold voltage1.4 VMax · 3.5mA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 10A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 6V |
| Power Dissipation (Max) | - |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR) |
| Package / Case | Die |
| Supplier Device Package | Die |
| Other | |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 2.6 nC @ 6 V |
| Input Capacitance (Ciss) (Max) @ Vds | 90 pF @ 400 V |
| Mfr | GaNPower |
| Product Status | Active |
| Series | - |
| Technology | GaNFET (Gallium Nitride) |
| Vgs (Max) | +7.5V, -12V |
| Vgs(th) (Max) @ Id | 1.4V @ 3.5mA |
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