GaNPowerUnited States
GaNFET N-CH 1200V 7A TO252
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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage1.2 kV
Continuous drain current7 A
Gate threshold voltage1.7 VMax · 3.5mA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 7A |
| Drain to Source Voltage (Vdss) | 1200 V |
| Drive Voltage (Max Rds On, Min Rds On) | 6V |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR) |
| Other | |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 3.1 nC @ 6 V |
| Input Capacitance (Ciss) (Max) @ Vds | 90 pF @ 700 V |
| Mfr | GaNPower |
| Product Status | Active |
| Series | - |
| Technology | GaNFET (Gallium Nitride) |
| Vgs (Max) | +7.5V, -12V |
| Vgs(th) (Max) @ Id | 1.7V @ 3.5mA |
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