GaNPowerUnited States
Power IC based on Power GaN HEMT
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View full reportTechnical parameters
| Power | |
|---|---|
| Voltage - Load | 650V |
| Voltage - Supply (Vcc/Vdd) | 8V ~ 20V |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package | Bag |
| Package / Case | 8-WDFN Exposed Pad |
| Supplier Device Package | 8-DFN (8x8) |
| Other | |
| Input Type | Non-Inverting |
| Interface | PWM |
| Mfr | GaNPower |
| Number of Outputs | 1 |
| Output Configuration | Low Side |
| Product Status | Active |
| Rds On (Typ) | 85mOhm (Max) |
| Series | - |