SiC MOSFET N-CH 1200V 60A TO-24
沟道N 沟道
耐压1.2 kV
连续漏极电流60 A
导通电阻52 mΩ
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沟道N 沟道
耐压1.2 kV
连续漏极电流60 A
导通电阻52 mΩ最大 · 20A
阈值电压4 V最大 · 10mA
| 电源 | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Power Dissipation (Max) | 395W (Tc) |
| 环境与封装 | |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Package | Tube |
| Package / Case | TO-247-4 |
| Supplier Device Package | TO-247-4L |
| 其他 | |
| FET Feature | - |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 2565 pF @ 1000 V |
| Mfr | Goford Semiconductor |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 52mOhm @ 20A, 18V |
| Series | - |
| Technology | SiCFET (Silicon Carbide) |
| Vgs (Max) | -10V, +20V |
| Vgs(th) (Max) @ Id | 4V @ 10mA |
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技术资料
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