Goford SemiconductorTaiwan, China
N60V,170A,RD<2.5M@10V,VTH1.2V~2.
All alternatives
View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage60 V
Continuous drain current170 A
On-resistance2.5 mΩMax · 20A
Gate threshold voltage2.5 VMax · 250μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 170A (Tc) |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Power Dissipation (Max) | 215W (Tc) |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR) Cut Tape (CT) Digi-Reel® |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Supplier Device Package | TO-263 |
| Other | |
| FET Feature | Standard |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 70 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5119 pF @ 30 V |
| Mfr | Goford Semiconductor |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 2.5mOhm @ 20A, 10V |
| Series | SGT |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |