MOSFET N-CH 100V 65A TO-252
沟道N 沟道
连续漏极电流65 A
导通电阻8 mΩ
阈值电压3 V
全部替代型号
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沟道N 沟道
连续漏极电流65 A
导通电阻8 mΩ最大 · 50A
阈值电压3 V最大 · 250μA
| 电源 | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 65A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Power Dissipation (Max) | 100W (Tc) |
| 环境与封装 | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package | TO-252 |
| 其他 | |
| FET Feature | Standard |
| FET Type | N-Channel |
| Mfr | Goford Semiconductor |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 50A, 10V |
| Series | SGT |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |