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技术参数

电源
Current - Continuous Drain (Id) @ 25°C10.1A (Ta)
Drain to Source Voltage (Vdss)20V
Power - Max3.6W
环境与封装
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageTube
Package / Case4-VDFN
Supplier Device Package4-QFN (2x2)
其他
Base Product NumberGWS92
Configuration2 N-Channel (Dual) Common Drain
FET Feature-
Gate Charge (Qg) (Max) @ Vgs11nC @ 4V
Input Capacitance (Ciss) (Max) @ Vds900pF @ 10V
MfrRenesas Electronics Corporation
Product StatusObsolete
Rds On (Max) @ Id, Vgs13mOhm @ 6.5A, 4.5V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1.5V @ 1mA

技术资料

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