onsemiUnited States
OPTOISO 4.17KV TRANS W/BASE 6DIP
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View full reportTechnical parameters
Key specs
Channels1
Isolation voltage4.17 kV
Output typeTransistor
Current transfer ratio20 %10mA
| Power | |
|---|---|
| Current - DC Forward (If) (Max) | 80 mA |
| Current - Output / Channel | 100mA |
| Current Transfer Ratio (Max) | - |
| Current Transfer Ratio (Min) | 20% @ 10mA |
| Number of Channels | 1 |
| Voltage - Forward (Vf) (Typ) | 1.15V |
| Voltage - Isolation | 4170Vrms |
| Voltage - Output (Max) | 200V |
| AC and DC characteristics | |
| Rise / Fall Time (Typ) | - |
| Environment and package | |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 100°C |
| Package | Tube |
| Package / Case | 6-DIP (0.300", 7.62mm) |
| Supplier Device Package | 6-DIP |
| Other | |
| Base Product Number | H11D3 |
| Input Type | DC |
| Mfr | onsemi |
| Output Type | Transistor with Base |
| Product Status | Active |
| Series | - |
| Turn On / Turn Off Time (Typ) | 5µs, 5µs |
| Vce Saturation (Max) | 400mV |