MOSFET N-CH 40V 45A 5LFPAK
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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage40 V
Continuous drain current45 A
On-resistance4.2 mΩMax · 22.5A
Gate threshold voltage3 VMax · 1mA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 45A (Ta) |
| Drain to Source Voltage (Vdss) | 40 V |
| Drive Voltage (Max Rds On, Min Rds On) | 7V, 10V |
| Power Dissipation (Max) | 30W (Tc) |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C |
| Package | Tape & Reel (TR) |
| Package / Case | SC-100, SOT-669 |
| Supplier Device Package | LFPAK |
| Other | |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 62 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4650 pF @ 10 V |
| Mfr | Renesas Electronics Corporation |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 4.2mOhm @ 22.5A, 10V |
| Series | - |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 3V @ 1mA |
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