Taiwan Semiconductor CorporationTaiwan, China
75NS, 1A, 1000V, HIGH EFFICIENT
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View full reportTechnical parameters
Key specs
Reverse voltage1 kV
Average rectified current1 A
Forward voltage1.7 VMax · 1 A
TypeStandard
| Power | |
|---|---|
| Current - Average Rectified (Io) | 1 A |
| Current - Reverse Leakage @ Vr | 5 µA @ 1000 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 1 A |
| Voltage - Peak Reverse (Max) | 1 kV |
| Environment and package | |
| Grade | Automotive |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package | Tube |
| Package / Case | 4-DIP (0.300", 7.62mm) |
| Qualification | AEC-Q101 |
| Supplier Device Package | DBL |
| Other | |
| Diode Type | Single Phase |
| Mfr | Taiwan Semiconductor Corporation |
| Product Status | Active |
| Series | - |
| Technology | Standard |