Taiwan Semiconductor CorporationTaiwan, China
50NS, 1A, 100V, HIGH EFFICIENT R
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View full reportTechnical parameters
Key specs
Reverse voltage100 V
Average rectified current1 A
Forward voltage950 mVMax · 1 A
TypeStandardFast Recovery =< 500ns，> 200mA (Io)
| Power | |
|---|---|
| Current - Average Rectified (Io) | 1A |
| Current - Reverse Leakage @ Vr | 5 µA @ 100 V |
| Voltage - DC Reverse (Vr) (Max) | 100 V |
| Voltage - Forward (Vf) (Max) @ If | 950 mV @ 1 A |
| Environment and package | |
| Grade | Automotive |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Package | Tape & Reel (TR) |
| Package / Case | SOD-123 |
| Qualification | AEC-Q101 |
| Supplier Device Package | Sub SMA |
| Other | |
| Capacitance @ Vr, F | 20pF @ 4V, 1MHz |
| Mfr | Taiwan Semiconductor Corporation |
| Product Status | Not For New Designs |
| Reverse Recovery Time (trr) | 50 ns |
| Series | - |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Technology | Standard |