Taiwan Semiconductor CorporationTaiwan, China
DIODE GEN PURP 200V 1A THIN SMA
All alternatives
View full reportTechnical parameters
Key specs
Reverse voltage200 V
Average rectified current1 A
Forward voltage1 VMax · 1 A
TypeStandardFast Recovery =< 500ns，> 200mA (Io)
| Power | |
|---|---|
| Current - Average Rectified (Io) | 1A |
| Current - Reverse Leakage @ Vr | 1 µA @ 200 V |
| Voltage - DC Reverse (Vr) (Max) | 200 V |
| Voltage - Forward (Vf) (Max) @ If | 1 V @ 1 A |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Package | Tape & Reel (TR) Cut Tape (CT) Digi-Reel® |
| Package / Case | DO-221AC, SMA Flat Leads |
| Supplier Device Package | Thin SMA |
| Other | |
| Base Product Number | HS1D |
| Capacitance @ Vr, F | 20pF @ 4V, 1MHz |
| Mfr | Taiwan Semiconductor Corporation |
| Product Status | Active |
| Reverse Recovery Time (trr) | 50 ns |
| Series | - |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Technology | Standard |
Documents
No documents are linked to this part yet.