Rohm SemiconductorJapan
MOSFET N/P-CH 30V 5A/7A 9DFN
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View full reportTechnical parameters
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 5A (Ta), 7A (Ta) |
| Drain to Source Voltage (Vdss) | 30V |
| Power - Max | 2W (Ta) |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Package | Tape & Reel (TR) Cut Tape (CT) Digi-Reel® |
| Package / Case | 8-PowerWDFN |
| Supplier Device Package | DFN3333-9DC |
| Other | |
| Base Product Number | HS8MA2 |
| Configuration | N and P-Channel |
| FET Feature | - |
| Gate Charge (Qg) (Max) @ Vgs | 7.8nC @ 10V, 8.4nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 320pF @ 10V, 365pF @ 10V |
| Mfr | Rohm Semiconductor |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 80mOhm @ 5.5A, 10V, 35mOhm @ 7A, 10V |
| Series | - |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
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