Infineon TechnologiesGermany
SILICON CARBIDE MOSFET, PG-TO247
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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage650 V
Continuous drain current26 A
On-resistance111 mΩMax · 11.2A
Gate threshold voltage5.7 VMax · 3.3mA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 26A (Tc) |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Power Dissipation (Max) | 104W (Tc) |
| Environment and package | |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Package | Tube |
| Package / Case | TO-247-4 |
| Supplier Device Package | PG-TO247-4-3 |
| Other | |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 19 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 624 pF @ 400 V |
| Mfr | Infineon Technologies |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 111mOhm @ 11.2A, 18V |
| Series | CoolSiC™ |
| Technology | SiCFET (Silicon Carbide) |
| Vgs (Max) | +20V, -2V |
| Vgs(th) (Max) @ Id | 5.7V @ 3.3mA |
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