MOSFET N-CH 650V 22.4A TO220
沟道N 沟道
耐压650 V
连续漏极电流22.4 A
导通电阻150 mΩ
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沟道N 沟道
耐压650 V
连续漏极电流22.4 A
导通电阻150 mΩ最大 · 9.3A
阈值电压4.5 V最大 · 1mA
| 电源 | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 22.4A (Tc) |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Power Dissipation (Max) | 34.7W (Tc) |
| 环境与封装 | |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package | Tube |
| Package / Case | TO-220-3 Full Pack |
| Supplier Device Package | PG-TO220-3-111 |
| 其他 | |
| Base Product Number | IPA65R |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 86 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2340 pF @ 100 V |
| Mfr | Infineon Technologies |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 150mOhm @ 9.3A, 10V |
| Series | CoolMOS™ |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 4.5V @ 1mA |