Infineon TechnologiesGermany
MOSFET N-CH 650V 11.4A TO220
All alternatives
View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage650 V
Continuous drain current11.4 A
On-resistance310 mΩMax · 4.4A
Gate threshold voltage4.5 VMax · 400μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 11.4A (Tc) |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Power Dissipation (Max) | 32W (Tc) |
| Environment and package | |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package | Tube |
| Package / Case | TO-220-3 Full Pack |
| Supplier Device Package | PG-TO220-FP |
| Other | |
| Base Product Number | IPA65R310 |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 41 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1100 pF @ 100 V |
| Mfr | Infineon Technologies |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 310mOhm @ 4.4A, 10V |
| Series | CoolMOS™ CFD2 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 4.5V @ 400µA |
Documents
No documents are linked to this part yet.