Infineon TechnologiesGermany
MOSFET N-CH 800V 8A TO220-3F
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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage800 V
Continuous drain current8 A
On-resistance650 mΩMax · 5.1A
Gate threshold voltage3.9 VMax · 470μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 8A (Ta) |
| Drain to Source Voltage (Vdss) | 800 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Power Dissipation (Max) | 33W (Tc) |
| Environment and package | |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Package | Tube |
| Package / Case | TO-220-3 Full Pack |
| Supplier Device Package | TO-220-3F |
| Other | |
| Base Product Number | IPA80R650 |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1100 pF @ 100 V |
| Mfr | Infineon Technologies |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 650mOhm @ 5.1A, 10V |
| Series | CoolMOS™ |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 3.9V @ 470µA |