Infineon TechnologiesGermany
N-CHANNEL POWER MOSFET
All alternatives
View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage40 V
Continuous drain current90 A
On-resistance2.2 mΩMax · 90A
Gate threshold voltage2 VMax · 95μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
| Drain to Source Voltage (Vdss) | 40 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Power Dissipation (Max) | 167W (Tc) |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Package | Bulk |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package | PG-TO263-3-2 |
| Other | |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 166 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 13000 pF @ 20 V |
| Mfr | Infineon Technologies |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 2.2mOhm @ 90A, 10V |
| Series | OptiMOS™ 3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 2V @ 95µA |