IPB034N06L3GATMA1

Not For New DesignsSingle FETs, MOSFETsPG-TO263-3

MOSFET N-CH 60V 90A D2PAK

All alternatives

ChannelN-channel

Drain-source voltage60 V

Continuous drain current90 A

On-resistance3.4 mΩMax · 90A

Gate threshold voltage2.2 VMax · 93μA

Power
Current - Continuous Drain (Id) @ 25°C	90A (Tc)
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Power Dissipation (Max)	167W (Tc)
Environment and package
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 175°C (TJ)
Package	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package	PG-TO263-3
Other
Base Product Number	IPB034
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	79 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds	13000 pF @ 30 V
Mfr	Infineon Technologies
Product Status	Not For New Designs
Rds On (Max) @ Id, Vgs	3.4mOhm @ 90A, 10V
Series	OptiMOS™
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	2.2V @ 93µA