MOSFET N-CH 650V 11.4A D2PAK
沟道N 沟道
耐压650 V
连续漏极电流11.4 A
导通电阻310 mΩ
全部替代型号
查看完整报告技术参数
沟道N 沟道
耐压650 V
连续漏极电流11.4 A
导通电阻310 mΩ最大 · 4.4A
阈值电压4.5 V最大 · 400μA
| 电源 | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 11.4A (Tc) |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Power Dissipation (Max) | 104.2W (Tc) |
| 环境与封装 | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR) Cut Tape (CT) Digi-Reel® |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package | PG-TO263-3 |
| 其他 | |
| Base Product Number | IPB65R310 |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 41 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1100 pF @ 100 V |
| Mfr | Infineon Technologies |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 310mOhm @ 4.4A, 10V |
| Series | CoolMOS™ |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 4.5V @ 400µA |