IPB95R310PFD7ATMA1

在产单 FET,MOSFETPG-TO263-3-2

LOW POWER_NEW

沟道N 沟道
耐压950 V
连续漏极电流17.5 A
导通电阻310 mΩ

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技术参数

沟道N 沟道
耐压950 V
连续漏极电流17.5 A
导通电阻310 mΩ最大 · 10.4A
阈值电压3.5 V最大 · 520μA
电源
Current - Continuous Drain (Id) @ 25°C17.5A (Tc)
Drain to Source Voltage (Vdss)950 V
Drive Voltage (Max Rds On, Min Rds On)10V
Power Dissipation (Max)125W (Tc)
环境与封装
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Package / Case-
Supplier Device PackagePG-TO263-3-2
其他
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1765 pF @ 400 V
MfrInfineon Technologies
Product StatusActive
Rds On (Max) @ Id, Vgs310mOhm @ 10.4A, 10V
SeriesCoolMOS™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id3.5V @ 520µA

技术资料