Infineon TechnologiesGermany
MOSFET N-CH 25V 30A TO252-3
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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage25 V
Continuous drain current30 A
On-resistance10.4 mΩMax · 30A
Gate threshold voltage2 VMax · 20μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Drain to Source Voltage (Vdss) | 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Power Dissipation (Max) | 52W (Tc) |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package | PG-TO252-3-11 |
| Other | |
| Base Product Number | IPD10N |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1358 pF @ 15 V |
| Mfr | Infineon Technologies |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 10.4mOhm @ 30A, 10V |
| Series | OptiMOS™ |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 2V @ 20µA |