MOSFET P-CH 60V 6.5A TO252-3
沟道P 沟道
耐压60 V
连续漏极电流6.5 A
导通电阻250 mΩ
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沟道P 沟道
耐压60 V
连续漏极电流6.5 A
导通电阻250 mΩ最大 · 6.5A
阈值电压2 V最大 · 270μA
| 电源 | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 6.5A (Tc) |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Power Dissipation (Max) | 28W (Tc) |
| 环境与封装 | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package | PG-TO252-3-313 |
| 其他 | |
| Base Product Number | IPD25DP06 |
| FET Feature | - |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 13.8 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 420 pF @ 30 V |
| Mfr | Infineon Technologies |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 250mOhm @ 6.5A, 10V |
| Series | OptiMOS™ |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 2V @ 270µA |
器件图片
技术资料
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