Infineon TechnologiesGermany
MOSFET N-CH 60V 25A TO252-31
All alternatives
View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage60 V
Continuous drain current25 A
On-resistance30 mΩMax · 25A
Gate threshold voltage2.2 VMax · 8μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 25A (Tc) |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Power Dissipation (Max) | 29W (Tc) |
| Environment and package | |
| Grade | Automotive |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR) Cut Tape (CT) Digi-Reel® |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Qualification | AEC-Q101 |
| Supplier Device Package | PG-TO252-3-11 |
| Other | |
| Base Product Number | IPD25N06 |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 16.3 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1220 pF @ 25 V |
| Mfr | Infineon Technologies |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 25A, 10V |
| Series | OptiMOS™ |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±16V |
| Vgs(th) (Max) @ Id | 2.2V @ 8µA |