MOSFET P-CH 40V 50A TO252-3
沟道P 沟道
耐压40 V
连续漏极电流50 A
导通电阻12.6 mΩ
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沟道P 沟道
耐压40 V
连续漏极电流50 A
导通电阻12.6 mΩ最大 · 50A
阈值电压4 V最大 · 85μA
| 电源 | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Drain to Source Voltage (Vdss) | 40 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Power Dissipation (Max) | 58W (Tc) |
| 环境与封装 | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR) Cut Tape (CT) Digi-Reel® |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package | PG-TO252-3-313 |
| 其他 | |
| Base Product Number | IPD50 |
| FET Feature | - |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 51 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3670 pF @ 25 V |
| Mfr | Infineon Technologies |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 12.6mOhm @ 50A, 10V |
| Series | OptiMOS®-P2 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 4V @ 85µA |
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