IPD65R1K4CFDATMA2

Last Time BuySingle FETs, MOSFETsPG-TO252-3

MOSFET N-CH 650V 2.8A TO252-3

All alternatives

ChannelN-channel

Drain-source voltage650 V

Continuous drain current2.8 A

On-resistance1.4 ΩMax · 1A

Gate threshold voltage4.5 VMax · 100μA

Power
Current - Continuous Drain (Id) @ 25°C	2.8A (Tc)
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Power Dissipation (Max)	28.4W (Tc)
Environment and package
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Package	Tape & Reel (TR)
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package	PG-TO252-3
Other
Base Product Number	IPD65R1
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	262 pF @ 100 V
Mfr	Infineon Technologies
Product Status	Last Time Buy
Rds On (Max) @ Id, Vgs	1.4Ohm @ 1A, 10V
Series	CoolMOS™ CFD2
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	4.5V @ 100µA