Infineon TechnologiesGermany
MOSFET N-CH 650V 10.1A TO252-3
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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage650 V
Continuous drain current10.1 A
On-resistance650 mΩMax · 2.1A
Gate threshold voltage3.5 VMax · 210μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 10.1A (Tc) |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Power Dissipation (Max) | 86W (Tc) |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package | PG-TO252-3 |
| Other | |
| Base Product Number | IPD65R |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 440 pF @ 100 V |
| Mfr | Infineon Technologies |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 650mOhm @ 2.1A, 10V |
| Series | CoolMOS™ |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 3.5V @ 210µA |