MOSFET N-CH 650V 4.5A TO252-3
沟道N 沟道
耐压650 V
连续漏极电流4.5 A
导通电阻950 mΩ
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沟道N 沟道
耐压650 V
连续漏极电流4.5 A
导通电阻950 mΩ最大 · 1.5A
阈值电压3.5 V最大 · 200μA
| 电源 | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 4.5A (Tc) |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Power Dissipation (Max) | 37W (Tc) |
| 环境与封装 | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package | PG-TO252-3 |
| 其他 | |
| Base Product Number | IPD65R950 |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 15.3 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 328 pF @ 100 V |
| Mfr | Infineon Technologies |
| Product Status | Last Time Buy |
| Rds On (Max) @ Id, Vgs | 950mOhm @ 1.5A, 10V |
| Series | CoolMOS™ C6 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 3.5V @ 200µA |